FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Transistor Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 250V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 500W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Moisture Sensitivity Level (MSL) Not Applicable