FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 250V
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 389W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)