Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 58.3W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Transistor Type N-Channel
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR