PD85035TR-E
RoHS 
RoHS compliant
RoHS compliantPackage PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
TRANS RF N-CH FET POWERSO-10RF
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Voltage - Test 13.6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power - Output 15W
Drain to Source Breakdown Voltage 40V
Drain Current-Max (Abs) (ID) 8A
Gain 17dB
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 8A
Transistor Type LDMOS
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 40V
Transistor Application AMPLIFIER
Current - Test 350mA
Case Connection SOURCE
Power Dissipation 95W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G2
Pin Count 10
Base Part Number PD85035
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 870MHz
Current Rating 8A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 95W
Subcategory FET General Purpose Power
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Active
Pbfree Code yes
Packaging Tape & Reel (TR)
Physical
Transistor Element Material SILICON
Number of Pins 3
Surface Mount YES
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supply Chain
Factory Lead Time 25 Weeks
Alternative Model
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