PD85006TR-E
RoHS 
RoHS compliant
RoHS compliantPackage PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
FET RF 40V 870MHZ POWERSO-10RF
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Voltage - Test 13.6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power - Output 5W
Drain to Source Breakdown Voltage 40V
Drain Current-Max (Abs) (ID) 2A
Gain 17dB
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 2A
Transistor Type LDMOS
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 40V
Transistor Application AMPLIFIER
Current - Test 200mA
Case Connection SOURCE
Power Dissipation 36.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 1
JESD-30 Code R-PDSO-G2
Pin Count 10
Base Part Number PD85006
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 870MHz
Current Rating 2A
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 250
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 36.5W
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Matte Tin (Sn) - annealed
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Discontinued
JESD-609 Code e3
Packaging Cut Tape (CT)
Physical
Number of Pins 3
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Mount Surface Mount
Alternative Model
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