PD85006L-E
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
TRANS RF POWER POWERFLAT5X5
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Voltage - Test 13.6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power - Output 5W
Drain to Source Breakdown Voltage 40V
Drain Current-Max (Abs) (ID) 2A
Max Output Power 6W
Gain 17dB
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 2A
Transistor Type LDMOS
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 40V
Transistor Application AMPLIFIER
Current - Test 200mA
Case Connection SOURCE
Power Dissipation 20.8W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Number of Elements 4
JESD-30 Code S-PQCC-N5
Pin Count 5
Base Part Number PD85006
Frequency 870MHz
Current Rating 2A
Terminal Position QUAD
Max Power Dissipation 20.8W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 5
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Active
Packaging Tape & Reel (TR)
Physical
Number of Pins 14
Package / Case 8-PowerVDFN
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 11 Weeks
Alternative Model
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