FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 7A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 25V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 79W
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Min Operating Temperature -65°C
Max Operating Temperature 165°C
Moisture Sensitivity Level (MSL) 3 (168 Hours)