FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 7A
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 25V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Peak Reflow Temperature (Cel) 225
Max Power Dissipation 26.7W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish MATTE TIN
Moisture Sensitivity Level (MSL) 3 (168 Hours)