FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 65V
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 5A
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 65V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Max Power Dissipation 73W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 165°C
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 3 (168 Hours)