FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 40V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 7A
Polarity/Channel Type N-CHANNEL
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 79W
Additional Feature HIGH RELIABILITY
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)