FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.5A
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 40V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Max Power Dissipation 31.7W
Subcategory FET General Purpose Power
Additional Feature HIGH RELIABILITY
Min Operating Temperature -65°C
Max Operating Temperature 165°C
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 3 (168 Hours)