NTF5P03T3
RoHS
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Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
P-CHANNEL POWER MOSFET
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Inventory: 9853
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 250 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 19A
Drain-source On Resistance-Max 0.1Ohm
Drain Current-Max (Abs) (ID) 3.7A
JEDEC-95 Code TO-261AA
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PDSO-G4
Pin Count 4
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 240
Terminal Form GULL WING
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Terminal Finish TIN LEAD
Number of Terminations 4
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Physical
Transistor Element Material SILICON
Surface Mount YES
Alternative Model
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