IRF9531
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
P-CHANNEL POWER MOSFET
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 500 mJ
DS Breakdown Voltage-Min 80V
Pulsed Drain Current-Max (IDM) 48A
Drain-source On Resistance-Max 0.3Ohm
Drain Current-Max (Abs) (ID) 12A
JEDEC-95 Code TO-220AB
Polarity/Channel Type P-CHANNEL
Transistor Application SWITCHING
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status COMMERCIAL
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Terminal Finish TIN LEAD
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code no
JESD-609 Code e0
Physical
Transistor Element Material SILICON
Surface Mount NO
Alternative Model
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