Power Dissipation Ambient-Max 0.6W
FET Technology HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min 7V
Drain Current-Max (Abs) (ID) 0.14A
Transistor Type pHEMT FET
Polarity/Channel Type N-CHANNEL
Transistor Application SWITCHING
Operating Mode DEPLETION MODE
Operating Temperature (Max) 85°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 225
Subcategory FET RF Small Signal
Additional Feature LOW NOISE
Moisture Sensitivity Level (MSL) 1 (Unlimited)