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Package TO-92
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
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Technical Details

Technical

Operating Mode DEPLETION MODE
Power Dissipation 350mW
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 15V
Polarity/Channel Type N-CHANNEL
Continuous Drain Current (ID) 20mA
Gate to Source Voltage (Vgs) -25V
Drain to Source Breakdown Voltage 25V
FET Technology JUNCTION
Highest Frequency Band VERY HIGH FREQUENCY B
Element Configuration Single
Power Dissipation-Max 350mW
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 30
Current Rating 10mA
Peak Reflow Temperature (Cel) 240
Terminal Position BOTTOM
Voltage - Rated DC 25V
Subcategory Other Transistors
HTS Code 8541.21.00.95
Min Operating Temperature -55°C
Max Operating Temperature 155°C
Terminal Finish Tin/Lead (Sn/Pb)
Number of Terminations 3
Pbfree Code no
JESD-609 Code e0
Packaging Bulk

Dimensions

Height 4.58mm
Length 4.58mm
Width 3.86mm

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Physical

Weight 201mg
Number of Pins 3
Package / Case TO-92
Mount Through Hole

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 1 day ago)

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