FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 40V
Continuous Drain Current (ID) 16A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 180V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Max Power Dissipation 300W
Current Rating (Amps) 1mA
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)