FET Technology METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 40V
Continuous Drain Current (ID) 6A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 170V
Transistor Application AMPLIFIER
Operating Mode DEPLETION MODE
Max Power Dissipation 115W
Current Rating (Amps) 100μA
Subcategory FET General Purpose Powers
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)