Min Breakdown Voltage 80V
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 40V
Continuous Drain Current (ID) 40A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 80V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Max Power Dissipation 500W
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)