Turn On Time-Max (ton) 18ns
FET Technology METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) 10A
Transistor Type 2 N-Channel (Dual) Common Source
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Max Power Dissipation 500W
Min Operating Temperature -55°C
Max Operating Temperature 200°C
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)