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Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Technical

Voltage - Test 28V
Power - Output 100W
Drain to Source Breakdown Voltage 65V
Gain 12 dB
Gate to Source Voltage (Vgs) 40V
Continuous Drain Current (ID) 16A
Drain to Source Voltage (Vdss) 65V
Current - Test 200mA
Element Configuration Dual
Power Dissipation-Max 270W
Number of Elements 2
Frequency 400MHz
Current Rating 16A
Voltage - Rated 65V
Min Operating Temperature -65°C
Max Operating Temperature 200°C

Physical

Number of Pins 8
Mount Screw

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