Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Max Power Dissipation 116W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Transistor Type N-Channel
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4A
FET Technology METAL-OXIDE SEMICONDUCTOR