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RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description HEMT N-CH 28V 23W DC-3GHZ 8SOIC
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Buying Options
Total Price: USD $52.08
Unit Price: USD $52.0784
≥1 USD $52.0784
≥10 USD $48.92008
≥100 USD $43.870226
Inventory: 131
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Power Dissipation Ambient-Max 28W
Voltage - Test 28V
FET Technology HIGH ELECTRON MOBILITY
Power - Output 1.5W
DS Breakdown Voltage-Min 100V
Drain-source On Resistance-Max 0.5Ohm
Gain 14dB
Transistor Type HEMT
Polarity/Channel Type N-CHANNEL
Current - Test 200mA
Case Connection SOURCE
Operating Mode DEPLETION MODE
Configuration SINGLE
Number of Elements 1
Operating Temperature (Min) -40°C
Operating Temperature (Max) 85°C
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 0Hz~3GHz
Current Rating 5A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Additional Feature HIGH RELIABILITY
Voltage - Rated 100V
Number of Terminations 8
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Active
Published 2013
Packaging Tube

Physical

Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width) Exposed Pad

Supply Chain

Factory Lead Time 2 Weeks

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