Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 400W
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Transistor Type 2 N-Channel (Dual) Common Source
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 40V
FET Technology METAL-OXIDE SEMICONDUCTOR