Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Transistor Application AMPLIFIER
Transistor Type 2 N-Channel (Dual) Common Source
Continuous Drain Current (ID) 16A
Gate to Source Voltage (Vgs) 40V
Drain to Source Breakdown Voltage 125V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 400W