FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 65V
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 65V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Max Power Dissipation 70W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 200°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)