FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 40V
Continuous Drain Current (ID) 60A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 125V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Max Power Dissipation 1.35kW
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)