FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 125V
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 40V
Continuous Drain Current (ID) 6A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 125V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Max Power Dissipation 115W
Subcategory FET General Purpose Power
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)