FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 65V
Gate to Source Voltage (Vgs) 40V
Continuous Drain Current (ID) 32A
Transistor Type 2 N-Channel (Dual) Common Source
Drain to Source Voltage (Vdss) 65V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 500W
Subcategory FET General Purpose Powers
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)