Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation 100W
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Transistor Type N-Channel
Continuous Drain Current (ID) 5A
Gate to Source Voltage (Vgs) 40V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 65V
FET Technology METAL-OXIDE SEMICONDUCTOR