MAGX-002731-180L00
RoHS
/
Package Ceramic
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
FETS RF GAN HEMT 180W 2.7-3.1GHZ
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Inventory: 6131
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Technical Details
Physical
Mount Screw
Package / Case Ceramic
Number of Pins 3
Technical
Packaging Bulk
Published 2015
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 95°C
Min Operating Temperature -40°C
Voltage - Rated 65V
Subcategory FET RF Small Signal
Max Power Dissipation 192W
Terminal Position DUAL
Terminal Form FLAT
Current Rating 500mA
Frequency 2.7GHz~3.1GHz
Pin Count 2
JESD-30 Code R-CDFM-F2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 175V
Polarity/Channel Type N-CHANNEL
Transistor Type HEMT
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) -8V
Gain 11.2dB
Power - Output 180W
FET Technology HIGH ELECTRON MOBILITY
Voltage - Test 50V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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