IXZ210N50L
RoHS 
RoHS compliant
RoHS compliantPackage 6-SMD Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
IXYS RF IXZ210N50L RF FET Transistor, 500 V, 10 A, 470 W, 175 MHz, DE-275
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Technical
Voltage - Test 50V
Drain to Source Resistance 1Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
Power - Output 200W
Gain 16dB
Continuous Drain Current (ID) 10A
Transistor Type N-Channel
Drain to Source Voltage (Vdss) 500V
Rise Time 4ns
Transistor Application AMPLIFIER
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 175MHz
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form FLAT
Terminal Position DUAL
Max Power Dissipation 470W
Max Operating Temperature 175°C
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2004
Packaging Tube
Physical
Transistor Element Material SILICON
Number of Pins 6
Surface Mount YES
Package / Case 6-SMD Module
Alternative Model
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