IGN1011L1200
RoHS 
RoHS compliant
RoHS compliantPackage /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
GAN, RF POWER TRANSISTOR, L-BAND
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Buying Options
Total Price: USD $698.75
Unit Price: USD $698.7464
≥1 USD $698.7464
≥10 USD $687.91008
Inventory: 65
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Highest Frequency Band L B
FET Technology HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min 180V
Polarity/Channel Type N-CHANNEL
Transistor Application AMPLIFIER
Case Connection SOURCE
Operating Mode DEPLETION MODE
Configuration SINGLE
Number of Elements 1
Operating Temperature (Min) -55°C
JESD-30 Code R-CDFM-F2
Terminal Form FLAT
Terminal Position DUAL
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Physical
Transistor Element Material GALLIUM NITRIDE
Surface Mount YES
Supply Chain
Factory Lead Time 4 Weeks
Alternative Model
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