2N3819
RoHS
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Package TO-226-3, TO-92-3 (TO-226AA)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
RF JFET Transistors N-CH -25V 10mA BULK
PDF
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Buying Options
Total Price: USD $1.57
Unit Price: USD $1.5664
≥1 USD $1.5664
≥10 USD $1.4872
≥100 USD $1.408
≥500 USD $1.3288
≥1000 USD $1.3024
Inventory: 319
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Feedback Cap-Max (Crss) 4 pF
FET Technology JUNCTION
Drain Current-Max (Abs) (ID) 0.02A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 20mA
Transistor Type N-Channel JFET
Drain to Source Voltage (Vdss) 25V
Transistor Application AMPLIFIER
Power Dissipation 360mW
Operating Mode DEPLETION MODE
Element Configuration Single
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code O-PBCY-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Max Power Dissipation 360mW
Subcategory Other Transistors
HTS Code 8541.21.00.95
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code no
JESD-609 Code e0
Published 2001
Packaging Bulk
Physical
Transistor Element Material SILICON
Weight 453.59237mg
Surface Mount NO
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supply Chain
Factory Lead Time 6 Weeks
Alternative Model
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