NE3516S02-A
RoHS
/
Package 4-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
IC HJ-FET RF N-CH S02 4-MICROX
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Technical Details
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Voltage - Test 2V
Noise Figure 0.35dB
Power - Output 165mW
Gain 14dB
Gate to Source Voltage (Vgs) -3V
Continuous Drain Current (ID) 60mA
Transistor Type N-Channel GaAs HJ-FET
Current - Test 10mA
Frequency 12GHz
Current Rating 60mA
Voltage - Rated 4V
Min Operating Temperature -65°C
Max Operating Temperature 125°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Physical
Number of Pins 4
Package / Case 4-SMD, Flat Leads
Mount Surface Mount
Alternative Model
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