NE3512S02-A
RoHS
/
Package 4-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
HJ-FET NCH 13.5DB S02
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Technical Details
Technical
Min Operating Temperature -65°C
Voltage - Rated 4V
Frequency 12GHz
Base Part Number NE3512
Power Dissipation 165mW
Current - Test 10mA
Transistor Type HFET
Continuous Drain Current (ID) 70mA
Gate to Source Voltage (Vgs) -3V
Gain 13.5dB
Drain to Source Breakdown Voltage 4V
Noise Figure 0.35dB
Voltage - Test 2V
Max Operating Temperature 125°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Physical
Number of Pins 4
Package / Case 4-SMD, Flat Leads
Mount Surface Mount
Alternative Model
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