NE3509M04-A
RoHS
/
Package SOT-343F
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Min Breakdown Voltage 4V
Voltage - Test 2V
Noise Figure 0.4dB
Power - Output 11dBm
Drain to Source Breakdown Voltage 2V
Gain 17.5dB
Gate to Source Voltage (Vgs) 3V
Continuous Drain Current (ID) 60mA
Transistor Type HFET
Current - Test 10mA
Power Dissipation 125mW
Base Part Number NE3509
Frequency 2GHz
Current Rating (Amps) 60mA
Voltage - Rated 4V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Bulk
Physical
Supplier Device Package M04
Number of Pins 4
Package / Case SOT-343F
Mount Surface Mount
Alternative Model
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