FET Technology HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min 5V
Drain Current-Max (Abs) (ID) 0.1A
Gate to Source Voltage (Vgs) 1V
Continuous Drain Current (ID) 100mA
Transistor Type pHEMT FET
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 2.7V
Transistor Application AMPLIFIER
Operating Mode DEPLETION MODE
Nominal Supply Current 10mA
Base Part Number ATF-551M4
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 270mW
Subcategory FET RF Small Signal
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Terminal Finish Gold (Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)