ATF-531P8-TR2
RoHS
/
Package 8-WFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
Trans JFET 7V 300mA pHEMT 8-Pin LPCC T/R
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Noise Figure 0.6dB
FET Technology HIGH ELECTRON MOBILITY
Power - Output 24.5dBm
DS Breakdown Voltage-Min 7V
Drain Current-Max (Abs) (ID) 0.3A
Gain 20dB
Gate to Source Voltage (Vgs) 1V
JEDEC-95 Code MO-229
Continuous Drain Current (ID) 300mA
Transistor Type E-pHEMT
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 4V
Transistor Application AMPLIFIER
Current - Test 135mA
Case Connection SOURCE
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
Base Part Number ATF-531P8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Frequency 2GHz
Current Rating 300mA
Peak Reflow Temperature (Cel) 260
Terminal Form NO LEAD
Terminal Position DUAL
Max Power Dissipation 1W
Voltage - Rated DC 4V
Subcategory FET RF Small Signal
Additional Feature LOW NOISE
Min Operating Temperature -65°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2014
Packaging Tape & Reel (TR)
Physical
Number of Pins 8
Package / Case 8-WFDFN Exposed Pad
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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