ATF-531P8-BLK
RoHS
/
Package 8-WFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description
AVAGO TECHNOLOGIES ATF-531P8-BLK RF FET Transistor, High Linearity, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, LPCC
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 2.1mm
Length 2.1mm
Height 800μm
Technical
Nominal Vgs 300 mV
Noise Figure 0.6dB
FET Technology HIGH ELECTRON MOBILITY
Power - Output 24.5dBm
DS Breakdown Voltage-Min 7V
Dual Supply Voltage 4V
Drain Current-Max (Abs) (ID) 0.3A
Gain 20dB
Gate to Source Voltage (Vgs) 1V
JEDEC-95 Code MO-229
Continuous Drain Current (ID) 300mA
Transistor Type E-pHEMT
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 4V
Transistor Application AMPLIFIER
Case Connection SOURCE
Power Dissipation 1W
Operating Mode ENHANCEMENT MODE
Nominal Supply Current 135mA
Configuration SINGLE
Number of Elements 1
Base Part Number ATF-531P8
Frequency 2GHz
Current Rating 300mA
Peak Reflow Temperature (Cel) 260
Terminal Position DUAL
Max Power Dissipation 1W
Subcategory FET RF Small Signal
Voltage - Rated 7V
Min Operating Temperature -65°C
Max Operating Temperature 150°C
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2008
Packaging Bulk
Physical
Number of Pins 8
Package / Case 8-WFDFN Exposed Pad
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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