FET Technology HIGH ELECTRON MOBILITY
DS Breakdown Voltage-Min 3V
Gate to Source Voltage (Vgs) -3V
Continuous Drain Current (ID) 25mA
Transistor Type pHEMT FET
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 1.5V
Transistor Application AMPLIFIER
Operating Mode DEPLETION MODE
Nominal Supply Current 10mA
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 180mW
Subcategory FET RF Small Signal
Additional Feature LOW NOISE
Min Operating Temperature -65°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)