FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 10A
Drain-source On Resistance-Max 0.144Ohm
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -3.7A
Turn-Off Delay Time 22 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Current - Continuous Drain (Id) @ 25°C 3.7A
Input Capacitance (Ciss) (Max) @ Vds 276pF @ 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 144m Ω @ 2.5A, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.8W
Subcategory Other Transistors
Terminal Finish PURE MATTE TIN
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ