FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 15V
Drain-source On Resistance-Max 0.4Ohm
Gate to Source Voltage (Vgs) 2V
Continuous Drain Current (ID) 1.17A
Turn-Off Delay Time 13 ns
Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 10V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Turn On Delay Time 4.5 ns
Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 840mW
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ