TPS1120DR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 15V 1.17A 8-SOIC
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Buying Options
Total Price: USD $1.78
Unit Price: USD $1.7776
≥1 USD $1.7776
≥10 USD $1.4784
≥100 USD $1.176824
≥500 USD $0.995773
≥1000 USD $0.844897
Inventory: 780
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Cut Tape (CT)
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory Other Transistors
Voltage - Rated DC -15V
Max Power Dissipation 840mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1.17A
Base Part Number TPS1120
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 840mW
Turn On Delay Time 4.5 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 5.45nC @ 10V
Rise Time 10 ns
Fall Time (Typ) 10 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.17A
Gate to Source Voltage (Vgs) 2V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 15V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.75mm
Length 4.9mm
Width 3.91mm
Thickness 1.58mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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