FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max 0.3Ohm
Drain Current-Max (Abs) (ID) 0.005A
Continuous Drain Current (ID) 1.5A
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 98pF @ 14V
Vgs(th) (Max) @ Id 2.2V @ 1mA
Rds On (Max) @ Id, Vgs 300m Ω @ 1.5A, 10V
Transistor Application AMPLIFIER
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Base Part Number TPIC1502
Reach Compliance Code unknown
Max Power Dissipation 2.86W
Subcategory FET General Purpose Power
Number of Terminations 24
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -40°C~150°C TJ