FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.019Ohm
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 15A
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 30V
Vgs(th) (Max) @ Id 3.6V @ 250μA
Rds On (Max) @ Id, Vgs 15m Ω @ 8A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number CSD88537
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.1W
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ