Feedback Cap-Max (Crss) 29 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 3.1 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 23A
Drain Current-Max (Abs) (ID) 5A
Continuous Drain Current (ID) 5A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 353pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 32.4m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number CSD87502
Max Power Dissipation 2.3W
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ