Feedback Cap-Max (Crss) 198 pF
Drain to Source Resistance 6.6mOhm
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 709 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Vgs(th) (Max) @ Id 2.3V @ 250μA
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Drain
Turn On Delay Time 164 ns
Operating Mode ENHANCEMENT MODE
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Base Part Number CSD87501
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.5W
Number of Terminations 10
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ