Feedback Cap-Max (Crss) 114 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 231 mJ
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0089Ohm
Continuous Drain Current (ID) 30A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Vgs(th) (Max) @ Id 1.9V @ 250μA
Rds On (Max) @ Id, Vgs 7.7m Ω @ 25A, 8V
Transistor Application SWITCHING
FET Type 2 N-Channel (Half Bridge)
Operating Mode ENHANCEMENT MODE
Base Part Number CSD87384
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ