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CSD87313DMS

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description 30V, N ch NexFET MOSFET?, dual common drain SON3x3, 5.5mOhm 8-WSON -55 to 150
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Buying Options
Total Price: USD $393.8
Unit Price: USD $0.3938
≥1000 USD $0.3938
Inventory: 2500
Minimum: 1000
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Dimensions

Thickness 750μm
Width 3.3mm
Length 3.3mm

Technical

Feedback Cap-Max (Crss) 200 pF
FET Feature Standard
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 67 mJ
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 15V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Drain
Case Connection SOURCE
Operating Mode ENHANCEMENT MODE
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Base Part Number CSD87313
Terminal Form NO LEAD
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series NexFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Surface Mount YES
Package / Case 8-PowerWDFN
Mounting Type Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 6 Weeks

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