Feedback Cap-Max (Crss) 200 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 67 mJ
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 4290pF @ 15V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Drain
Operating Mode ENHANCEMENT MODE
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Base Part Number CSD87313
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ