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CSD85312Q3E

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 20V 39A 8-Pin VSON EP T/R
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Buying Options
Total Price: USD $1.08
Unit Price: USD $1.0824
≥1 USD $1.0824
≥10 USD $0.88792
≥100 USD $0.690624
≥500 USD $0.585358
≥1000 USD $0.476837
Inventory: 1147
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD85312
Number of Elements 2
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 11 ns
FET Type 2 N-Channel (Dual) Common Source
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.4m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
Rise Time 27 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 76A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 5V Drive
Feedback Cap-Max (Crss) 40 pF

Dimensions

Length 3.3mm
Width 3.3mm
Thickness 900μm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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