Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD85312
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual) Common Source
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.4m Ω @ 10A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 76A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 5V Drive
Feedback Cap-Max (Crss) 40 pF