Feedback Cap-Max (Crss) 79 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 173 ns
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Drain
Operating Mode ENHANCEMENT MODE
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Base Part Number CSD85302
Max Power Dissipation 1.7W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ